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MIAA-xx12FA-200N

Description

Medium Frequency IGBT Modules – MIAA-xx12FA-200N

The MIAA-xx12FA-200N is a medium-power IGBT (Insulated Gate Bipolar Transistor) module typically designed for industrial power conversion and switching applications. It features modern V-Series Trench FS IGBT chips and integrated free-wheeling diodes for effective switching performance, high reliability, and low losses.

Key Features
  • Medium power IGBT module in a compact industrial housing.
  • Uses V-Series Trench FS IGBT technology for low saturation voltage and improved switching behavior.
  • Includes integrated free-wheeling diodes with soft recovery to reduce switching losses.
  • Standard IGBT package allows easy integration into existing converters and drives.
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